NTE317 Datasheet | NTE Electronics

Description : The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF munications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions. Features : D 70W Minimum with Greater than 13.5d B Gain D Withstands Severe Mismatch under Operating Conditions D Emitter Ballasted D Low Inductance Stripline Package Absolute Maximum Ratings: Collector Base Voltage, VCBO - - - - - - - - - - - . 36V Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 18V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Maximum Collector Current, IC - - - - - - - - - - - 15A Total Device Dissipation (+25°C), PT - - - - - - - - - . . 220W Thermal Resistance, Junction- to- Case, Rth JC - - - - - - - . . 0.8°C/W Junction Temperature Range, TJ - - - - - - - - . . . - 65° to +200°C Storage Temperature Range,...