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NTE320 - Silicon NPN RF Power Transistor

Description

The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large

signal amplifier applications required in commercial and industrial equipment operating to 300MHz.

Features

  • D Specified 12.5V, 175MHz Characteristics: Output Power: 40W Minimum Gain: 4.5dB Efficiency: 70% D Available in Two Different Package Styles: T72 Stud Mount: NTE320 W52K Flange Mount: NTE320F Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 18V Collector.
  • Base Voltage, VCBO.
  • 36V.

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Datasheet Details

Part number NTE320
Manufacturer NTE Electronics (defunct)
File Size 27.23 KB
Description Silicon NPN RF Power Transistor
Datasheet download datasheet NTE320 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE320F Silicon NPN RF Power Transistor
NTE32 Silicon Complementary Transistors
NTE322 Silicon NPN Transistor
NTE3220 Optoisolator
NTE3221 Optoisolator

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz. Features: D Specified 12.5V, 175MHz Characteristics: Output Power: 40W Minimum Gain: 4.5dB Efficiency: 70% D Available in Two Different Package Styles: T72 Stud Mount: NTE320 W52K Flange Mount: NTE320F Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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