NTE337 Datasheet | NTE Electronics

Description : The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large- signal amplifier driver and pre- driver stages. This device is intended for use in industrial munications equipment operating at frequencies to 80MHz. Features : D Specified 12.5V, 50MHz Characteristics: Output Power = 8W Minimum Gain = 10d B Efficiency = 50% Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 18V Collector- Base Voltage, VCB - - - - - - - - - - - . . 36V Emitter- Base Voltage, VEB - - - - - - - - - - - . . . . 4V Continuous Collector Current, IC - - - - - - - - - - . . . . 2A Total Device Dissipation (TC = +25°C), PD - - - - - - - - . . . . 20W Derate Above 25°C - - - - - - - - - - . . . . 114W/°C Operating Junction Temperature Range, TJ - - - - - - . . . . - 65° to +200°C Storage Temperature Range, Tstg - - -...