NTE338 Datasheet | NTE Electronics

Description : The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features : D Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12d B Efficiency = 45% D Intermodulation Distortion @ 20W (PEP): IMD = - 30d B Min D 100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 20V Collector- Base Voltage, VCBO - - - - - - - - - - - 40V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Continuous Collector Current, IC - - - - - - - - - - . . . . 4A Withstand Current (t = 5s) - - - - - - - - - - - . . . . 12A Total Device Dissipation (TC = +25°C), PD - - - - - - - - . . . . 80W Derate Above 25°C - - - - - - -...