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NTE341 - Silicon NPN Transistor RF Power Output

Description

The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications.

The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead for high gain performance.

Features

  • D 175MHz D 12.5 Volts D POUT = 4W Minimum D GP = 12dB D Grounded Emitter ce. 8 com Tr ial.

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Datasheet Details

Part number NTE341
Manufacturer NTE Electronics (defunct)
File Size 71.79 KB
Description Silicon NPN Transistor RF Power Output
Datasheet download datasheet NTE341 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE340 Silicon NPN Transistor
NTE342 Silicon NPN Transistor
NTE343 Silicon NPN Transistor
NTE345 Silicon NPN Transistor
NTE346 Silicon NPN Transistor

Full PDF Text Transcription

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NTE341 Silicon NPN Transistor RF Power Output PD Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min 18 36 4 − 10 4 12 − Typ − − − − − − − 180 Max Unit − − − 250 100 − − 230 W dB pF http://www.Datasheet4U.com OFF Characteristics Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Output Power Common−Emitter Amplifier Power Gain Output Capacitance F w C ww Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . .
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