NTE39 Overview
Key Specifications
Package: TO-218
Mount Type: Through Hole
Pins: 3
Height: 6.35 mm
Description
The NTE39 is a silicon PNP transistor in a TO126 type package designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. Features: D High Collector–Emitter Sustaining Voltage: VCEO(sus) = 300V @ IC = 1.0mA D Excellent DC Current Gain: hFE = 30 to 240 @ IC = 50mA Parameter OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics DC Current Gain hFE IC = 50mA, VCE = 10V 30 – 240 VCEO(sus) IC = 1.0mA, IB = 0 ICEO IEBO VCB = 300V, IE = 0 VEB = 3V, IC = 0 300 – – – – – – 100 100 V µA µA Symbol Test Conditions Min Typ Max Uni.
