NTE4164 Datasheet | NTE Electronics

NTE4164 Integrated Circuit NMOS, 64K Dynamic RAM, 150ns 16- Lead DIP Type Package Description: The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16- Lead DIP type package organized as 65,536 words of one bit each. Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS in order to retain data. CAS can remain high during the refresh sequence to conserve power. All inputs and outputs, including clocks, are patible with Series 74TTL. All address lines and data- in are latched on chip to simplify system design. Data- out is unlatched to allow greater system flexibility. Pin1 has no internal connections to allow...