NTE4164 - high speed Dynamic Random Access Memory

Product Overview

NTE

Part number	NTE4164
Manufacturer	NTE
File Size	236.75 KB
Description	high speed Dynamic Random Access Memory
Datasheet	NTE4164 Datasheet
Additional preview pages of the NTE4164 datasheet.

The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16

Lead DIP type package organized as 65,536 words of one bit each.

Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS in order to retain data.

D 65,536 x 1 Organization D Single +5V Supply (10% Tolerance) D Upward Pin Compatible with 4116 (16K Dynamic RAM) D Max Access Time from RAS: Less than 150ns D Min Cycle Time (Read or Write): Less than 260ns D Lon.

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Published: Jun 28, 2019 |