NTE4164 Overview
Key Specifications
Package: DIP
Pins: 16
Operating Voltage: 5 V
Max Voltage (typical range): 5.5 V
Description
The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16-Lead DIP type package organized as 65,536 words of one bit each. Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS in order to retain data.
