NTE4164 datasheet by NTE Electronics (defunct).
| Part number | NTE4164 |
|---|---|
| Datasheet | NTE4164-NTE.pdf |
| File Size | 236.75 KB |
| Manufacturer | NTE Electronics (defunct) |
| Description | high speed Dynamic Random Access Memory |
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The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16−Lead DIP type package organized as 65,536 words of one bit each. Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS in order to retain data. CAS can remain high during the refresh sequence to conserve power.
View all NTE Electronics (defunct) datasheets
| Part Number | Description |
|---|---|
| NTE4032B | CMOS Logic |
| NTE4038B | CMOS Logic |
| NTE4066B | 8 Input NAND/AND gate |
| NTE44 | NPN Transistor |
| NTE45 | PNP Transistor |
| NTE451 | Silicon N-Channel JFET Transistor |
| NTE452 | Silicon N-Channel JFET Transistor |
| NTE454 | MOSFET |
| NTE456 | N-Channel Silicon JFET |
| NTE457 | Silicon N-Channel JFET Transistor |
