Datasheet Details
| Part number | NTE4164 |
|---|---|
| Manufacturer | NTE Electronics (defunct) |
| File Size | 236.75 KB |
| Description | high speed Dynamic Random Access Memory |
| Datasheet | NTE4164-NTE.pdf |
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Overview: NTE4164 Integrated Circuit NMOS, 64K Dynamic RAM, 150ns 16−Lead DIP Type.
| Part number | NTE4164 |
|---|---|
| Manufacturer | NTE Electronics (defunct) |
| File Size | 236.75 KB |
| Description | high speed Dynamic Random Access Memory |
| Datasheet | NTE4164-NTE.pdf |
|
|
|
: The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16−Lead DIP type package organized as 65,536 words of one bit each.
Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS in order to retain data.
CAS can remain high during the refresh sequence to conserve power.
| Part Number | Description |
|---|---|
| NTE4032B | CMOS Logic |
| NTE4038B | CMOS Logic |
| NTE4066B | 8 Input NAND/AND gate |
| NTE44 | NPN Transistor |
| NTE45 | PNP Transistor |
| NTE451 | Silicon N-Channel JFET Transistor |
| NTE452 | Silicon N-Channel JFET Transistor |
| NTE454 | MOSFET |
| NTE456 | N-Channel Silicon JFET |
| NTE457 | Silicon N-Channel JFET Transistor |