NTE488 Datasheet | NTE Electronics

Description : The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features : D High Power Gain: Gpe ≥ 10.7d B @ VCC = 13.5V, PO = 3.5W, f = 175MHz D TO39 Metal Sealed Package for High Reliability D Emitter Electrode is Connected Electrically to the Case Application: 1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector- Base Voltage, VCBO - - - - - - - - - - - 35V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Collector Current, IC - - - - - - - - - - - - - 1A Collector Dissipation, PC TA = +25°C - - - - - - - - - - - - - 1W TC = +25°C - - - - - - - - - - - - . . . . 10W Junction Temperature, Tj - - - - - - - - -...