NTE489 Datasheet | NTE Electronics

NTE489 Silicon P- Channel JFET Transistor General Purpose AF Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate- Drain Voltage (Note 1), VGD - - - - - - - - - - . . 30V Gate- Source Voltage (Note 1), VGS - - - - - - - - - - 30V Gate Current, IG - - - - - - - - - - - - - - 50m A Total Device Dissipation (TA = +25°C), PD - - - - - - - - . 360m W Derate Above 25°C - - - - - - - - - - . . 3.27m W/°C Operating Junction Temperature Range, TJ - - - - - - . . . . - 55° to +135°C Storage Temperature Range, Tstg - - - - - - - - . . - 55° to +150°C Lead Temperature (During Soldering, 1/16” from case for 10sec), TL - - - . . . . +300°C Note 1. Geometry is symmetrical. Units may be operated with source and drain leads interchanged. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Static Characteristics Gate- Source Breakdown Voltage Gate Reverse Current Gate- Source Cutoff Voltage Gate Current Saturation Drain Current Dynamic Characteristics mon- Source Forward Transconductance mon- Source Output Conductance mon- Source Input Capacitance mon- Source Reverse Transfer Capaticance Equivalent Short- Circuit Input Noise Voltage gfs gos Ciss Crss en VDS...