NTE490 Datasheet | NTE Electronics

NTE490 MOSFET N- Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: Drain- Source Voltage, VDS - - - - - - - - - - - . . . 60V Gate- Source Voltage, VGS - - - - - - - - - - - . . ±20V Drain Current (Note 1), ID - - - - - - - - - - - . 500m A Total Device Dissipation (TA = +25°C), PD - - - - - - - - . 350m W Operating Junction Temperature Range, TJ - - - - - - . . . . - 55° to +150°C Storage Temperature Range, Tstg - - - - - - - - . . - 55° to +150°C Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Drain- Source Breakdown Voltage Gate Reverse Current ON Characteristics (Note 2) Gate Threshold Voltage Static Drain- Source ON Resistance Drain Cutoff Current Forward Transconductance Small- Signal Characteristics Input Capacitance Switching Characteristics Turn- On Time Turn- Off Time ton toff ID = 200m A ID = 200m A - - 4 4 10 10 ns ns Ciss VDS = 10V, VGS = 0, f = 1MHz - - 60 p F VGS(Th) r DS(on) ID(off) gfs VDS = VGS, ID = 1m A VGS = 10V, ID = 200m A VDS = 25V, VGS = 0 VDS = 10V, ID = 250m A 0.8 - - - 2.0 1.8 - 200 3.0 5.0 0.5 - V V(BR)DSS VGS = 0, ID = 100µA IGSS VGS = 15V, VDS = 0...