NTE5351 Datasheet | NTE Electronics

Features : D Fast Turn- Off Time D High di/dt and dv/dt Capabilities D Shorted- Emitter Gate- Cathode Construction D Center Gate Construction Non- Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRSOM - - - - . 700V Non- Repetitive Peak Off- State Voltage (Gate Open, Note 1), VDSOM - - - - 700V Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRROM - - - - - . 600V Repetitive Peak Off- State Voltage (Gate Open, Note 1), VDROM - - - - - 600V RMS On- State Current (TC = +60°C, 180° conduction angle), IT(RMS) - - - - 5.0A Average On- State Current (TC = +60°C, 180° conduction angle), IT(AV) - - - . . . 3.2A Peak Surge (Non- Repetitive) On- State Current, ITSM (TC = +60°C, for one full cycle at applied voltage) 60Hz (Sinusoidal) - - - - - - - - - - - . . 80A 50Hz (Sinusoidal) - - - - - - - - - - - . . 65A Rate of Change of On- State Current (VD = 600V, IGT = 50m A, t = 1 to 8.3ms), di/dt - 200A/µs Fusing Current (TJ = - 40° to +100°C, t = 1 to 8.3ms), I2t - - - - - - . . 25A Peak Forward Gate Power Dissipation (10µs Max, Note 2), PGM - - - - - 3W Peak Reverse Gate Power Dissipation (10µs Max, Note 2), PRGM - - - - . . . . 3W Average Gate Power Dissipation (10µs Max, Note 2), PG(AV) - - -...