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NTE5496 - Silicon Controlled Rectifier

Description

The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half wave AC control applications such as motor controls, heating controls, power supplies, or wherever half wave silicon gate controlled, solid

state devices are needed.

Features

  • D Glass.
  • Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability D Blocking Voltage to 600 Volts Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Peak Repetitive Off.
  • State Blocking Voltage, VRRM, VDRM NTE5491.
  • . . 100V NTE5492.

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Datasheet Details

Part number NTE5496
Manufacturer NTE Electronics (defunct)
File Size 21.66 KB
Description Silicon Controlled Rectifier
Datasheet download datasheet NTE5496 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE5491 Silicon Controlled Rectifier
NTE5498 Silicon Controlled Rectifier
NTE5499 Silicon Controlled Rectifier
NTE54 Silicon Complementary Transistors
NTE5400 Silicon Controlled Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE5491 thru NTE5496 Silicon Controlled Rectifier (SCR) 10 Amp Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: D Glass–Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability D Blocking Voltage to 600 Volts Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Peak Repetitive Off–State Blocking Voltage, VRRM, VDRM NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . .
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