NTE555 Datasheet | NTE Electronics

Description : The NTE555 is designed primarily for high- efficiency UHF and VHF detector applications. It is readily adaptable to may other fast switching RF and digital applications. Features : D Schottky Barrier Construction Provides Stable Characteristics by Eliminating the “Cat- Whisker” or “S- Bend” Contact D Very Low Capacitance: 1.0p F D Extremely Low Minority Carrier Lifetime: 100ps (Max) D High Reverse Voltage: VR = 50V D Low Reverse Leakage Current: IR = 200n A (Max) Absolute Maximum Ratings: (TJ = +125°C, unless otherwise indicated) Reverse Voltage, VR - - - - - - - - - - - - . . . . 50V Forward Power Dissipation (TA = 25°C), PF - - - - - - - - 400m W Derate Above 25°C - - - - - - - - - - - 4m W/°C Operating Junction Temperature Range, TJ - - - - - - . . . . - 55° to +125°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +150°C Electrical Characteristics: (TA = +25°C, unless otherwise indicated) Parameter Reverse Breakdown Voltage Diode Capacitance Minority Carrier Lifetime Reverse Leakage Current Forward Voltage Case Capactiance Symbol V(BR)R CT r IR VF CC Test Conditions IR = 10µA VR = 20V, f = 1MHz IF = 5m A, Krakauer Method VR = 25V IF = 10m A f = 1MHz Min 50 - - - - - Typ - 0.48 15 7 1.0 0.1 Max - 1.0 100 200 1.2 - Unit V p F ps n A V p F .162 (4.12) Max .027 (0.68) Max Cathode Anode .125 (3.17) Max .103 (2.6) Max .502 (12.76) Max .061 (1.54) Max .035 (0.88) Max .041 (1.04) Max .085 (2.15) Max .055 (1.4) Max .170 (4.31)...