Datasheet4U Logo Datasheet4U.com

NTE555 - Silicon Pin Diode UHF/VHF Detector

Datasheet Summary

Description

The NTE555 is designed primarily for high

efficiency UHF and VHF detector applications.

It is readily adaptable to may other fast switching RF and digital applications.

Features

  • D Schottky Barrier Construction Provides Stable Characteristics by Eliminating the “Cat.
  • Whisker” or “S.
  • Bend” Contact D Very Low Capacitance: 1.0pF D Extremely Low Minority Carrier Lifetime: 100ps (Max) D High Reverse Voltage: VR = 50V D Low Reverse Leakage Current: IR = 200nA (Max) Absolute Maximum Ratings: (TJ = +125°C, unless otherwise indicated) Reverse Voltage, VR.
  • .

📥 Download Datasheet

Datasheet preview – NTE555

Datasheet Details

Part number NTE555
Manufacturer NTE
File Size 20.43 KB
Description Silicon Pin Diode UHF/VHF Detector
Datasheet download datasheet NTE555 Datasheet
Additional preview pages of the NTE555 datasheet.

📁 Similar Datasheet

  • NTE5550 - (NTE5550 - NTE5558) Silicon Controlled Rectifiers (NTE Electronics)
  • NTE5552 - Silicon Controlled Rectifiers (NTE Electronics)
  • NTE5554 - Silicon Controlled Rectifiers (NTE Electronics)
  • NTE5556 - Silicon Controlled Rectifiers (NTE Electronics)
  • NTE5558 - Silicon Controlled Rectifiers (NTE Electronics)
  • NTE5586 - Silicon Controlled Rectifier (NTE Electronics)
  • NTE5587 - Silicon Controlled Rectifier (NTE Electronics)
  • NTE5588 - Silicon Controlled Rectifier (NTE Electronics)
  • NTE5589 - Silicon Controlled Rectifier (NTE Electronics)
  • NTE5590 - Silicon Controlled Rectifier (NTE Electronics)
Other Datasheets by NTE
  • NTE5550 - Silicon Controlled Rectifiers
  • NTE5558 - Silicon Controlled Rectifiers
  • NTE555A - Silicon Pin Diode
  • NTE55 - Silicon Complementary Transistors
  • NTE5500 - Silicon Controlled Rectifier
  • NTE5509 - Silicon Controlled Rectifier
  • NTE5511 - Silicon Controlled Rectifier
  • NTE5513 - Silicon Controlled Rectifier

Full PDF Text Transcription

Click to expand full text
NTE555 Silicon Pin Diode UHF/VHF Detector Description: The NTE555 is designed primarily for high–efficiency UHF and VHF detector applications. It is readily adaptable to may other fast switching RF and digital applications. Features: D Schottky Barrier Construction Provides Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact D Very Low Capacitance: 1.0pF D Extremely Low Minority Carrier Lifetime: 100ps (Max) D High Reverse Voltage: VR = 50V D Low Reverse Leakage Current: IR = 200nA (Max) Absolute Maximum Ratings: (TJ = +125°C, unless otherwise indicated) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Forward Power Dissipation (TA = 25°C), PF . . . . . . . . . . .
Published: |