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NTE555 - Silicon Pin Diode UHF/VHF Detector

General Description

The NTE555 is designed primarily for high

efficiency UHF and VHF detector applications.

It is readily adaptable to may other fast switching RF and digital applications.

Key Features

  • D Schottky Barrier Construction Provides Stable Characteristics by Eliminating the “Cat.
  • Whisker” or “S.
  • Bend” Contact D Very Low Capacitance: 1.0pF D Extremely Low Minority Carrier Lifetime: 100ps (Max) D High Reverse Voltage: VR = 50V D Low Reverse Leakage Current: IR = 200nA (Max) Absolute Maximum Ratings: (TJ = +125°C, unless otherwise indicated) Reverse Voltage, VR.
  • .

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Datasheet Details

Part number NTE555
Manufacturer NTE Electronics (defunct)
File Size 20.43 KB
Description Silicon Pin Diode UHF/VHF Detector
Datasheet download datasheet NTE555 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE555 Silicon Pin Diode UHF/VHF Detector Description: The NTE555 is designed primarily for high–efficiency UHF and VHF detector applications. It is readily adaptable to may other fast switching RF and digital applications. Features: D Schottky Barrier Construction Provides Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact D Very Low Capacitance: 1.0pF D Extremely Low Minority Carrier Lifetime: 100ps (Max) D High Reverse Voltage: VR = 50V D Low Reverse Leakage Current: IR = 200nA (Max) Absolute Maximum Ratings: (TJ = +125°C, unless otherwise indicated) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Forward Power Dissipation (TA = 25°C), PF . . . . . . . . . . .