Datasheet4U Logo Datasheet4U.com

NTE61 - Silicon Complementary Transistors

Download the NTE61 datasheet PDF. This datasheet also covers the NTE60 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.

Key Features

  • D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO(sus).
  • . . . . 140V Collector.
  • Base Voltage, VCBO.
  • . . . . 140V Emitter.
  • Base Voltage, VEBO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE60_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE61
Manufacturer NTE Electronics (defunct)
File Size 24.10 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE61 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTE610 Voltage Variable Capacitance Diode (Tuning Diode) NTE Electronics
NTE6102 Industrial Rectifier / 550A NTE Electronics
NTE6109 Industrial Rectifier / 550A NTE Electronics
NTE6110 Industrial Rectifier / 500 Amp NTE Electronics
NTE6111 Silicon Power Rectifier Diode / 1100 Amp NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE6154 Silicon Industrial Rectifier
NTE6155 Silicon Industrial Rectifier
NTE6156 Silicon Industrial Rectifier
NTE6157 Silicon Industrial Rectifier
NTE6158 Silicon Industrial Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE60 (NPN) & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Emitter–Base Voltage, VEBO . .