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TIP126 - Silicon PNP Transistor

General Description

The TIP126 is a silicon PNP Darlington transistor in a TO 220 type package designed for general purpose amplifier and low

speed switching applications.

Key Features

  • D High DC Current Gain: hFE = 2500 (Typ) at IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 80V (Min) at IC = 100mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2.0V (Max) at IC = 3A Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 4.0V (Max) at IC = 5A Absolute Maximum Ratings: (Note 1) Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.

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Datasheet Details

Part number TIP126
Manufacturer NTE Electronics (defunct)
File Size 55.84 KB
Description Silicon PNP Transistor
Datasheet download datasheet TIP126 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
TIP120 Silicon NPN Transistor
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TIP101 Silicon NPN Darlington Power Amp

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP126 Silicon PNP Transistor Darlington Power Amp, Switch TO−220 Type Package Description: The TIP126 is a silicon PNP Darlington transistor in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 2500 (Typ) at IC = 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V (Min) at IC = 100mA D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2.0V (Max) at IC = 3A Low Collector−Emitter Saturation Voltage: VCE(sat) = 4.0V (Max) at IC = 5A Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .