18NQ11T Datasheet | NXP Semiconductors

Description .. N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using Trench MOS™ technology. 1.2 Features s Low on-state resistance s Isolated mounting base s Fast switching s Low thermal resistance 1.3 Applications s DC-to-DC converters s Switched-mode power supplies 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 31.2 W s ID ≤ 12.5 A s RDSon ≤ 90 mΩ 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT186A (TO-220F), simplified outline and symbol Description gate (g) source (s) drain (d) mounting base; isolated g s mb d Simplified outline Symbol MBB076 1 2 3 MBK110 SOT186A (TO-220F) Philips Semiconductors PHX18NQ11T N-channel Trench MOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name PHX18NQ11T TO-220F Description Version Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3 lead TO-220AB ‘full pack’ Type number w w w . D a t a S h e e t 4 U . c o m 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Th = 25 °C peak source (diode forward) current Th = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 7.5 A; tp = 0.09 ms; VDD ≤ 15 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C [1] [1] Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Th = 25 °C; VGS = 10 V; Figure 2 and 3 Th = 100 °C; VGS = 10 V Figure 2 Th = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Th = 25 °C; Figure 1 [1] [1] [1] [1] Min - 55 - 55 - Max 110 110 ±20 12.5 7.9 50.2 31.2 +150 +150 12.5 50.2 56 Unit V V V A A A W °C °C A A m J Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] Extern...