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2PB1424 - PNP transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.

NPN complement: 2PD2150.

Key Features

  • I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Full PDF Text Transcription (Reference)

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2PB1424 20 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 — 15 January 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: 2PD2150. 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I DC-to-DC conversion I MOSFET gate driving I Motor control I Charging circuits I Power switches (e.g. motors, fans) I Thin Film Transistor (TFT) backlight inverter 1.