• Part: BF1214
  • Description: Dual N-channel dual gate MOSFET
  • Category: MOSFET
  • Manufacturer: NXP Semiconductors
  • Size: 211.34 KB
Download BF1214 Datasheet PDF
NXP Semiconductors
BF1214
description The BF1214 is a bination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Two low noise gain controlled amplifiers in a single package; both with a partly integrated bias I Superior cross modulation performance during AGC I High forward transfer admittance I High forward transfer admittance to input capacitance ratio I Both amplifiers optimized for VHF applications, yet suitable for VHF and UHF applications 1.3 Applications I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage N...