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BGU2003 - SiGe MMIC amplifier

General Description

Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.

Key Features

  • Low current.
  • Very high power gain.
  • Low noise figure.
  • Integrated temperature compensated biasing.
  • Control pin for adjustment bias current.
  • Supply and RF output pin combined.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGU2003 SiGe MMIC amplifier Preliminary specification 2002 May 17 www.DataSheet4U.com Philips Semiconductors Preliminary specification SiGe MMIC amplifier FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Control pin for adjustment bias current • Supply and RF output pin combined. APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) • Low noise amplifiers • Satellite television tuners (SATV) • High frequency oscillators.