BLA0912-250R Description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The mon source is connected to the mounting flange. Test information Typical RF performance measured in mon source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band.
BLA0912-250R Key Features
- High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing mon mo