BLD6G21LS-50 - TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

This page provides the datasheet information for the BLD6G21LS-50, a member of the BLD6G21L-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor family.

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NXP Semiconductors

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Datasheet Details

Part number	BLD6G21LS-50
Manufacturer	NXP Semiconductors
File Size	162.90 KB
Description	TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
Datasheet	BLD6G21LS-50 Datasheet
Additional preview pages of the BLD6G21LS-50 datasheet.

BLD6G21LS-50 Product details

Description

The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology.

This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz.

Features

I Typical TD-SCDMA performance at frequencies from 2010 MHz to 2025 MHz: N Average output power = 8 W N Power gain = 13.5 dB N Efﬁciency = 42 % I Fully optimized integrated Doherty concept: N integrated asymmetrical power splitter at input N integrated power combiner N peak biasing down to 0 V N low junction temperature N high efﬁciency I Integrated ESD protection NXP Semiconductors BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor I I I I I Good pai.

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Published: Jan 11, 2010 |