BLD6G22L-50 - W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor

Product Overview

NXP Semiconductors

Part number	BLD6G22L-50
Manufacturer	NXP Semiconductors
File Size	144.24 KB
Description	W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
Datasheet	BLD6G22L-50 Datasheet
Additional preview pages of the BLD6G22L-50 datasheet.

The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology.

This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz.

Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz: Average output power = 8 W Power gain = 13.3 dB Efficiency = 38 %.
Fully optimized integrated Doherty concept: integrated asymmetrical power splitter at input integrated power combiner peak biasing down to 0 V low junction temperature high efficiency NXP Semiconductors BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor.

BLD6G22L-50 - W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor (Ampleon)
BLD6G22LS-50 - W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor (Ampleon)
BLD122D - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
BLD123D - SILICON NPN TRANSISTOR (LZG)
BLD123D - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
BLD128D - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
BLD128D - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (JILIN SINO)
BLD128DA - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
BLD128DD - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
BLD135D - NPN Transistor (Shenzhen SI Semiconductors)

Other Datasheets by NXP Semiconductors

BLD6G22LS-50 - W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
BLD6G21L-50 - TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
BLD6G21LS-50 - TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

Published: Jan 11, 2010 |