BLD6G22LS-50 Datasheet | NXP Semiconductors

description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output biner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor. Table 1. Typical performance RF performance at Th = 25 °C. Mode of operation W-CDMA [1] [2] [1][2] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 8 Gp (d B) 13.3 ηD (%) 38 ACPR (d Bc) - 30 PL(3d B) (W) 52 Test signal: 2-carrier W-CDMA; test model 1; 64 DPCH; PAR = 8.3 d B at 0.01 % probability on CCDF; carrier spacing 5 MHz. IDq = 170 m A (main); VGS(amp)peak = 0 V. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. .. 1.2 Features - Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz: ‹ Average output power = 8 W ‹ Power gain = 13.3 d B ‹ Efficiency = 38 % - Fully optimized integrated Doherty concept: ‹ integrated asymmetrical power splitter at input ‹ integrated power biner ‹ peak biasing down to 0 V ‹ low junction temperature ‹ high efficiency NXP Semiconductors BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor - - - - - - Integrated ESD protection Good pair match (main and peak on the same chip) Independent control of main and peak bias Internally matched for ease of use Excellent ruggedness pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS) 1.3 Applications - High efficiency RF power amplifiers with digital pre-distortion for W-CDMA multi carrier applications in the 2110 MHz to 2170 MHz range. 2....