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BLD6G22LS-50

Manufacturer: NXP Semiconductors

BLD6G22LS-50 datasheet by NXP Semiconductors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLD6G22LS-50 datasheet preview

BLD6G22LS-50 Datasheet Details

Part number BLD6G22LS-50
Datasheet BLD6G22LS-50 BLD6G22L-50 Datasheet (PDF)
File Size 144.24 KB
Manufacturer NXP Semiconductors
Description W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
BLD6G22LS-50 page 2 BLD6G22LS-50 page 3

BLD6G22LS-50 Overview

The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output biner are integrated in a single package.

BLD6G22LS-50 Key Features

  • Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz: ‹ Average output power = 8 W ‹ Power gain = 13.3 dB
  • Fully optimized integrated Doherty concept: ‹ integrated asymmetrical power splitter at input ‹ integrated power biner ‹

BLD6G22LS-50 from other manufacturers

View BLD6G22LS-50 datasheet index

Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Ampleon
NXP Semiconductors logo - Manufacturer

More Datasheets from NXP Semiconductors

View all NXP Semiconductors datasheets

Part Number Description
BLD6G22L-50 W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
BLD6G21L-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

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