BLF6G20-110 is Power LDMOS transistor manufactured by NXP Semiconductors.
| Part Number | Description |
|---|---|
| BLF6G20-180PN | Power LDMOS transistor |
| BLF6G20-230PRN | Power LDMOS transistor |
| BLF6G20LS-110 | Power LDMOS transistor |
| BLF6G20LS-140 | Power LDMOS transistor |
| BLF6G22-45 | Power LDMOS transistor |
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. PAR = 7 dB at 0.01 % probability on CCDF per carrier;.
