BLF6G20-230PRN - Power LDMOS transistor

Product Overview

NXP Semiconductors

Part number	BLF6G20-230PRN
Manufacturer	NXP Semiconductors
File Size	84.44 KB
Description	Power LDMOS transistor
Datasheet	BLF6G20-230PRN Datasheet
Additional preview pages of the BLF6G20-230PRN datasheet.

230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 2000 mA: N Average output power = 50 W N Power gain = 16.5 dB (typ) N Efﬁciency = 29.5 % N ACPR =.
35 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restri.

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Published: Jul 1, 2009 |