BLF6G20LS-110 Datasheet | NXP Semiconductors

.. BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 01 - 28 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 19 ηD (%) 31 IMD3 (dBc) - 37[1] ACPR (dBc) - 40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic...