BLF6G20LS-110 Datasheet Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: .. BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 01 — 28 January 2008 Preliminary data sheet 1. Product proﬁle 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit.

I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efﬁciency = 31 % N IMD3 =.
37 dBc N ACPR =.
40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, re.

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