BLF6G20LS-110 - Power LDMOS transistor

This page provides the datasheet information for the BLF6G20LS-110, a member of the BLF6G20-110 Power LDMOS transistor family.

Product Overview

NXP Semiconductors

Part number	BLF6G20LS-110
Manufacturer	NXP Semiconductors
File Size	110.85 KB
Description	Power LDMOS transistor
Datasheet	BLF6G20LS-110 Datasheet
Additional preview pages of the BLF6G20LS-110 datasheet.

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efﬁciency = 31 % N IMD3 =.
37 dBc N ACPR =.
40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, re.

Other Datasheets by NXP Semiconductors

Published: Jul 1, 2009 |