BLF6G20LS-140 - Power LDMOS transistor

Product Overview

NXP Semiconductors

Part number	BLF6G20LS-140
Manufacturer	NXP Semiconductors
File Size	92.62 KB
Description	Power LDMOS transistor
Datasheet	BLF6G20LS-140 Datasheet
Additional preview pages of the BLF6G20LS-140 datasheet.

140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: N Average output power = 35.5 W N Power gain = 16.5 dB (typ) N Efﬁciency = 30 % N IMD3 =.
37 dBc N ACPR =.
40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I Compliant to Directive 200.

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Published: Jun 18, 2010 |