BLF6G20LS-140
BLF6G20LS-140 is Power LDMOS transistor manufactured by NXP Semiconductors.
Power LDMOS transistor
Rev. 01
- 27 February 2009
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Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1] f (MHz) 1930 to 1990
VDS (V) 28
PL(AV) (W) 35.5
Gp (dB) 16.5
ηD (%) 30
IMD3 (dBc)
- 37[1]
ACPR (dBc)
- 40[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge...
