BLF6G22-45 Datasheet Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: BLF6G22-45 Power LDMOS transistor Rev. 02 — 21 April 2008 .. Product data sheet 1. Product proﬁle 1.

Datasheet Details

45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit.

I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 405 mA: N Average output power = 2.5 W N Power gain = 18.5 dB (typ) N Efﬁciency = 13 % N ACPR =.
49 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restrict.

Brand Logo	Part Number	Description	Manufacturer
	BLF6G22-45	Power LDMOS transistor	Ampleon

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