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BLF6G22LS-100 Datasheet Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: BLF6G22LS-100 Power LDMOS transistor Rev. 02 — 31 March 2010 .. Product data sheet 1. Product profile 1.

General Description

100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit.

Key Features

  • Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: ‹ Average output power = 25 W ‹ Gain = 18.2 dB ‹ Efficiency = 29 % ‹ IMD3 =.
  • 37 dBc ‹ ACPR =.
  • 41 dBc.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (2000 MHz to 2200 MHz).
  • Internally m.

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BLF6G22LS-100 Distributor