BLF6G22LS-100 - Power LDMOS transistor

Product Overview

NXP Semiconductors

Part number	BLF6G22LS-100
Manufacturer	NXP Semiconductors
File Size	160.20 KB
Description	Power LDMOS transistor
Datasheet	BLF6G22LS-100 Datasheet
Additional preview pages of the BLF6G22LS-100 datasheet.

100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: Average output power = 25 W Gain = 18.2 dB Efficiency = 29 % IMD3 =.
37 dBc ACPR =.
41 dBc.
Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (2000 MHz to 2200 MHz).
Internally m.

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Published: Jun 18, 2010 |