BLF6G22LS-100 Overview
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. PAR = 7 dB at 0.01 % probability on CCDF per carrier;.
BLF6G22LS-100 Key Features
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (2000 MHz to 2200 MHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)