BLF6G22LS-75
description
75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1] f (MHz) 2110 to 2170
VDS (V) 28
PL(AV) (W) 17
Gp (d B) 18.7
ηD (%) 30.5
IMD3 (d Bc)
- 37.5[1]
ACPR (d Bc)
- 41.5[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 d B at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 690 m A: N Average output power = 17 W N Gain = 18.7 d B N Efficiency = 30.5 % N IMD3 =
- 37.5 d Bc N ACPR =
- 41.5 d Bc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I...
