BLF6G22LS-75 Datasheet Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: .. BLF6G22LS-75 Power LDMOS transistor Rev. 01 — 8 February 2008 Preliminary data sheet 1. Product proﬁle 1.

Datasheet Details

Part number	BLF6G22LS-75
Manufacturer	NXP Semiconductors
File Size	121.22 KB
Description	Power LDMOS transistor
Datasheet	BLF6G22LS-75_NXPSemiconductors.pdf

75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit.

I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 690 mA: N Average output power = 17 W N Gain = 18.7 dB N Efﬁciency = 30.5 % N IMD3 =.
37.5 dBc N ACPR =.
41.5 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC,.

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