BLF6G22S-45 datasheet by NXP Semiconductors.
| Part number | BLF6G22S-45 |
|---|---|
| Datasheet | BLF6G22S-45_NXPSemiconductors.pdf |
| File Size | 95.73 KB |
| Manufacturer | NXP Semiconductors |
| Description | Power LDMOS transistor |
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45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 2.5 Gp (dB) 18.5 ηD (%) 13 ACPR (dBc) −48[1] Test signal:.
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