BLF6G27-10 Datasheet | NXP Semiconductors

description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 2 Gp (d B) 19 ηD (%) 20 ACPR885k (d Bc) - 49[2] ACPR1980k (d Bc) - 64[2] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 d B at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 k Hz bandwidth. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 d B at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 m A: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS) NXP Semiconductors BLF6G27-10; BLF6G27-10G Wi MAX power LDMOS transistor .. 1.3 Applications I RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range. 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF6G27-10 (SOT975B) 1 1 2 3 sym112 BLF6G27-10G (SOT975C) 1 2 3 drain gate source [1] 1 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G27-10 BLF6G27-10G Description earless flanged ceramic package; 2 leads earless flanged ceramic package; 2 leads Version SOT975B SOT975C Type...