Download BLF6G27LS-135 Datasheet PDF
NXP Semiconductors
BLF6G27LS-135
description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS PL(AV) (V) 32 (W) 20 PL(p) Gp (W) 200 16 ηD ACPR885k ACPR1980k (d Bc) (d Bc) - 67[2] (d B) (%) - 52[2] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 d B at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. Measured within 30 k Hz bandwidth. 1.2 Features I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 d B at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 32 V and an IDq of 1200 m A: N Average output power = 20 W N Power gain = 16 d B N Drain efficiency = 22.5...