Download BLF6G27LS-75 Datasheet PDF
NXP Semiconductors
BLF6G27LS-75
description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 9 PL(M) Gp (W) 75 (d B) 17 ηD 23 ACPR885k ACPR1980k (d Bc) - 60[2] - 50[2] (%) (d Bc) Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 d B at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. Measured within 30 k Hz bandwidth. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 d B at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply...