BLF6G38LS-50
description
50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[2]
[1] [2] [3] f (MHz) 3400 to 3600
VDS PL(AV) (V) 28 (W) 9
PL(M)[1] Gp (W) 70 14
ηD 23
ACPR885k ACPR1980k (d Bc)
- 64[3]
- 49[3]
(d B) (%) (d Bc)
PL(M) stands for peak output power. Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8
- 13). PAR = 9.7 d B at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 k Hz bandwidth.
CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8
- 13]. PAR = 9.7 d B at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz)...
