BLF7G22LS-130
description
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA
[1] [2] f (MHz) 2110 to 2170 2110 to 2170
IDq (m A) 950 950
VDS (V) 28 28
PL(AV) (W) 30 33
Gp (d B) 18.5 18.5
ηD (%) 32 34
ACPR (d Bc)
- 32[1]
- 39[2]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 d B at 0.01 % probability on CCDF; carrier spacing 5 MHz. Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 d B at 0.01 % probability on CCDF.
1.2 Features and benefits
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- Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for...
