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BLF7G22LS-130 Datasheet

Manufacturer: NXP Semiconductors
BLF7G22LS-130 datasheet preview

Datasheet Details

Part number BLF7G22LS-130
Datasheet BLF7G22LS-130_NXPSemiconductors.pdf
File Size 193.78 KB
Manufacturer NXP Semiconductors
Description Power LDMOS transistor
BLF7G22LS-130 page 2 BLF7G22LS-130 page 3

BLF7G22LS-130 Overview

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Typical performance Typical RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF;.

BLF7G22LS-130 Key Features

  • Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (200
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BLF7G22LS-130 Distributor

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