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BLF7G22LS-130 - Power LDMOS transistor

Description

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF7G22LS-130
Manufacturer NXP Semiconductors
File Size 193.78 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G22LS-130 Datasheet
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BLF7G22LS-130 Power LDMOS transistor Rev. 01 — 2 February 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] [2] f (MHz) 2110 to 2170 2110 to 2170 IDq (mA) 950 950 VDS (V) 28 28 PL(AV) (W) 30 33 Gp (dB) 18.5 18.5 ηD (%) 32 34 ACPR (dBc) −32[1] −39[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.
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