• Part: BLL1214-35
  • Description: L-band radar LDMOS driver transistor
  • Manufacturer: NXP Semiconductors
  • Size: 99.61 KB
Download BLL1214-35 Datasheet PDF
NXP Semiconductors
BLL1214-35
BLL1214-35 is L-band radar LDMOS driver transistor manufactured by NXP Semiconductors.
DISCRETE SEMICONDUCTORS .. DATA SHEET M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver transistor Features .. - High power gain - Easy power control - Excellent ruggedness - Source on mounting base eliminates DC isolators, reducing mon mode inductance. APPLICATIONS - L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION 2 1 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package...