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BLL1214-35

Manufacturer: NXP Semiconductors

BLL1214-35 datasheet by NXP Semiconductors.

BLL1214-35 datasheet preview

BLL1214-35 Datasheet Details

Part number BLL1214-35
Datasheet BLL1214-35_NXPSemiconductors.pdf
File Size 99.61 KB
Manufacturer NXP Semiconductors
Description L-band radar LDMOS driver transistor
BLL1214-35 page 2 BLL1214-35 page 3

BLL1214-35 Overview

The mon source is connected to the flange. Top view MBK584 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit.

BLL1214-35 Key Features

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on mounting base eliminates DC isolators, reducing mon mode inductance

BLL1214-35 Applications

  • L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION
  • SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
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BLL1214-35 Distributor

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