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BLL6H0514L-130 - LDMOS driver transistor

Datasheet Summary

Description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

Table 1.

Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.

Features

  • Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLL6H0514L-130
Manufacturer NXP Semiconductors
File Size 319.76 KB
Description LDMOS driver transistor
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DataSheet.in BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 130 130 Gp (dB) 19 17 RLin (dB) 10 10 ηD (%) 54 50 Pdroop(pulse) (dB) 0 0 tr (ns) 15 15 tf (ns) 8 8 1.
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