BLL6H0514L-130
BLL6H0514L-130 is LDMOS driver transistor manufactured by NXP Semiconductors.
DataSheet.in
BLL6H0514L-130; BLL6H0514LS-130
LDMOS driver transistor
Rev. 1
- 9 August 2010 Preliminary data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 130 130 Gp (dB) 19 17 RLin (dB) 10 10 ηD (%) 54 50 Pdroop(pulse) (dB) 0 0 tr (ns) 15 15 tf (ns) 8 8
1.2 Features and benefits
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- - Easy power control Integrated ESD protection High flexibility with respect...
