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BLL6H0514LS-130 - LDMOS driver transistor

Download the BLL6H0514LS-130 datasheet PDF. This datasheet also covers the BLL6H0514L-130 variant, as both devices belong to the same ldmos driver transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

Table 1.

Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.

Key Features

  • Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLL6H0514L-130_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by NXP Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DataSheet.in BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 130 130 Gp (dB) 19 17 RLin (dB) 10 10 ηD (%) 54 50 Pdroop(pulse) (dB) 0 0 tr (ns) 15 15 tf (ns) 8 8 1.