BLM6G10-30G Datasheet PDF - NXP Semiconductors W-CDMA 900 MHz - 1000 MHz power MMIC Specs

BLM6G10-30G - W-CDMA 900 MHz - 1000 MHz power MMIC

This page provides the datasheet information for the BLM6G10-30G, a member of the BLM6G10-30 W-CDMA 900 MHz - 1000 MHz power MMIC family.

Datasheet Summary

Description

30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 920 MHz to 960 MHz.

Table 1.

Typical performance Typical RF performance at Th = 25 °C.

Features

I Typical 2-carrier W-CDMA performance at a frequency of 940 MHz: N Average output power = 2 W N Gain = 29 dB (typ) N Efﬁciency = 11.5 % N IMD3 =.
48.5 dBc N ACPR =.
52 dBc I Integrated temperature compensated bias I Excellent thermal stability I Biasing of individual stages is externally accessible I Integrated ESD protection I Small component size, very suitable for PA size reduction I On-chip matching (input matched to 50 ohm, output partially matched) I High power gain I Desi.

Datasheet Details

Part number	BLM6G10-30G
Manufacturer	NXP Semiconductors
File Size	109.37 KB
Description	W-CDMA 900 MHz - 1000 MHz power MMIC
Datasheet	BLM6G10-30G Datasheet
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Full PDF Text Transcription

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BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC Rev. 01 — 28 August 2009 www.DataSheet4U.com Objective data sheet 1. Product proﬁle 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 920 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or ﬂat lead (SOT834-1) Table 1. Typical performance Typical RF performance at Th = 25 °C. Mode of operation 2-carrier W-CDMA [1] f (MHz) f1 = 935; f2 = 945 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 29 ηD (%) 11.5 IMD3 (dBc) −48.5[1] ACPR (dBc) −52[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD).

Published: Jun 18, 2010 |