BLS6G3135S-120
description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 m A; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 3.1 to 3.5 VDS (V) 32 PL (W) 120 Gp (d B) 11 ηD (%) 43 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 m A, a tp of up to 300 µs with δ of 10 %: N Output power = 120 W N Gain = 11 d B N Efficiency = 43 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I pliant to Directive 2002/95/EC, regarding restriction of hazardous...
