This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BLS6G3135S-120 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 106.19 KB |
| Description | LDMOS S-Band radar power transistor |
| Datasheet | BLS6G3135S-120 BLS6G3135-120 Datasheet (PDF) |
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.. BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 01 — 14 August 2007 Preliminary data sheet 1. Product profile 1.1 General 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 3.1 to 3.5 VDS (V) 32 PL...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BLS6G3135S-120 | LDMOS S-Band radar power transistor | Ampleon |
| Part Number | Description |
|---|---|
| BLS6G3135S-20 | LDMOS S-Band radar power transistor |
| BLS6G3135-120 | LDMOS S-Band radar power transistor |
| BLS6G3135-20 | LDMOS S-Band radar power transistor |
| BLS6G2731-6G | LDMOS S-Band radar power transistor |
| BLS6G2933S-130 | LDMOS S-band radar power transistor |
