BLS6G3135S-20 Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: NXP Semiconductors

Overview: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 .. Product data sheet 1. Product proﬁle 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	BLS6G3135S-20
Manufacturer	NXP Semiconductors
File Size	263.57 KB
Description	LDMOS S-Band radar power transistor
Datasheet	BLS6G3135S-20 BLS6G3135-20 Datasheet (PDF)

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C;

I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N Power gain = 15.5 dB N Efﬁciency = 45 % I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semic.

Brand Logo	Part Number	Description	Other Manufacturers
	BLS6G3135S-20	LDMOS S-Band radar power transistor	Ampleon

Part Number	Description
BLS6G3135S-120	LDMOS S-Band radar power transistor
BLS6G3135-120	LDMOS S-Band radar power transistor
BLS6G3135-20	LDMOS S-Band radar power transistor
BLS6G2731-6G	LDMOS S-Band radar power transistor
BLS6G2933S-130	LDMOS S-band radar power transistor