BLS6G3135S-20
description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 m A; in a class-AB production test circuit. Mode of operation f (GHz) Pulsed RF VDS (V) PL (W) 20 Gp (d B) 15.5 ηD (%) 45 tr (ns) 20 tf (ns) 10
3.1 to 3.5 32
CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 m A, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N Power gain = 15.5 d B N Efficiency = 45 % I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro...
