Datasheet Details
| Part number | BLS6G3135S-20 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 263.57 KB |
| Description | LDMOS S-Band radar power transistor |
| Datasheet |
 BLS6G3135S-20 Datasheet
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General Description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit.
Key Features
- I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N Power gain = 15.5 dB N Efficiency = 45 % I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semic.