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BLS6G3135S-20 - LDMOS S-Band radar power transistor

This page provides the datasheet information for the BLS6G3135S-20, a member of the BLS6G3135-20 LDMOS S-Band radar power transistor family.

Description

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit.

Features

  • I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N Power gain = 15.5 dB N Efficiency = 45 % I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semic.

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Datasheet Details

Part number BLS6G3135S-20
Manufacturer NXP Semiconductors
File Size 263.57 KB
Description LDMOS S-Band radar power transistor
Datasheet download datasheet BLS6G3135S-20 Datasheet
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BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of operation f (GHz) Pulsed RF VDS (V) PL (W) 20 Gp (dB) 15.5 ηD (%) 45 tr (ns) 20 tf (ns) 10 3.1 to 3.5 32 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.
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