BUK6507-75C Datasheet | NXP Semiconductors

description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for intermediate level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V Automotive systems - Electric and electro-hydraulic power steering - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 [1] Min Typ Max Unit 75 V 100 A 204 W Static characteristics RDSon drain-source on-state resistance 6.5 7.6 mΩ NXP Semiconductors N-channel Trench MOS FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 191 m J Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive drain-source ID = 100 A; Vsup ≤ 75 V; avalanche energy RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped gate-drain charge ID = 25 A; VDS = 60 V; VGS = 10 V; see Figure 13; see Figure 14 Dynamic characteristics QGD 35 n C [1] Continuous current is limited by package. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mb Simplified outline Graphic symbol G mbb076 1 2 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUK6507-75C TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78A...