Datasheet Summary
N-channel TrenchMOS FET
Rev. 2
- 17 November 2010 Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
- AEC Q101 pliant
- Suitable for intermediate level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V and 24 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and...
