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BUK6E3R2-55C - N-Channel MOSFET

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

Features

  • AEC Q101 compliant.
  • Suitable for intermediate level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Datasheet Details

Part number BUK6E3R2-55C
Manufacturer NXP Semiconductors
File Size 181.84 KB
Description N-Channel MOSFET
Datasheet download datasheet BUK6E3R2-55C Datasheet

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Full PDF Text Transcription

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BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for intermediate level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.
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