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BUK6E3R2-55C

Manufacturer: NXP Semiconductors

BUK6E3R2-55C datasheet by NXP Semiconductors.

BUK6E3R2-55C datasheet preview

BUK6E3R2-55C Datasheet Details

Part number BUK6E3R2-55C
Datasheet BUK6E3R2-55C-NXPSemiconductors.pdf
File Size 181.84 KB
Manufacturer NXP Semiconductors
Description N-Channel MOSFET
BUK6E3R2-55C page 2 BUK6E3R2-55C page 3

BUK6E3R2-55C Overview

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

BUK6E3R2-55C Key Features

  • AEC Q101 pliant
  • Suitable for intermediate level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating
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BUK6E3R2-55C Distributor

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