BUK7508-55A Datasheet | NXP Semiconductors

N-channel Trench MOS standard level FET Rev. 03 - 14 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Low conduction losses due to low on-state resistance - Q101 pliant - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V loads - Automotive systems - General purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 11; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 [1] Min - Typ - Max Unit 55 75 254 16 V A W mΩ Static characteristics - 6.8 8 mΩ NXP Semiconductors N-channel Trench MOS standard level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 670 m J Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 75 A; Vsup ≤ 55 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped energy gate-drain charge VGS = 0 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure...