BUK7528-55A Datasheet | NXP Semiconductors

Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which Features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK7528-55A BUK7628-55A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 41 99 175 28 UNIT V A W ˚C mΩ PINNING TO220AB & SOT404 PIN 1 2 3 DESCRIPTION gate...