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BUK752R3-40C - N-channel TrenchMOS standard level FET

Datasheet Summary

Description

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.

Features

  • AEC Q101 compliant.
  • Avalanche robust.
  • Suitable for standard level gate drive.
  • Suitable for thermally demanding environment up to 175°C rating 1.3.

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Datasheet preview – BUK752R3-40C

Datasheet Details

Part number BUK752R3-40C
Manufacturer NXP Semiconductors
File Size 230.95 KB
Description N-channel TrenchMOS standard level FET
Datasheet download datasheet BUK752R3-40C Datasheet
Additional preview pages of the BUK752R3-40C datasheet.

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Full PDF Text Transcription

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BUK752R3-40C N-channel TrenchMOS standard level FET Rev. 03 — 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Avalanche robust „ Suitable for standard level gate drive „ Suitable for thermally demanding environment up to 175°C rating 1.3 Applications „ 12V Motor, lamp and solenoid loads „ High performance automotive power systems „ High performance Pulse Width Modulation applications 1.4 Quick reference data Table 1.
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