BUK754R0-55B Datasheet | NXP Semiconductors

TO -22 0A B N-channel Trench MOS standard level FET Rev. 5 - 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Low conduction losses due to low on-state resistance - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V loads - Automotive systems - General purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain current total power dissipation drain-source on-state resistance Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 55 75 300 V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 7; see Figure 12 3.4 4 mΩ NXP Semiconductors N-channel Trench MOS standard level FET Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped VGS = 10 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13 Min Typ Max Unit 1.2 J Table 1. Symbol EDS(AL)S Avalanche ruggedness Dynamic characteristics QGD 25 n...