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TO -22 0A B
BUK754R0-55B
N-channel TrenchMOS standard level FET
Rev. 5 — 22 April 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
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BUK754R0-55B Datasheet
