BUK7575-55A Datasheet | NXP Semiconductors

description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Low conduction losses due to low on-state resistance - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V loads - Automotive and general purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 V 20.3 A 62 W Static characteristics RDSon VGS = 10 V; ID = 10 A; Tj = 175 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive ID = 11 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped 30.3 m J 150 mΩ - 64 75 mΩ NXP Semiconductors N-channel Trench MOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mb Simplified outline Graphic symbol G mbb076 1 2 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUK7575-55A TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78A Type number All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 - 4 February 2011 2 of 13 NXP Semiconductors N-channel Trench MOS...